Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
High-power and high-efficiency rectifiers and converters
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Power factor correction
Switched mode power supplies
Uninterruptible power supplies
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
High-power and high-efficiency rectifiers and converters
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
