Mitsubishi Electric & Electronics USA, Inc. Power IPM Transistor PM25CL1A120

Description
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.
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Description
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IPM Transistor - PM25CL1A120 - Richardson RFPD
Downers Grove, IL, United States
Power IPM Transistor
PM25CL1A120
Power IPM Transistor PM25CL1A120
Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.

Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.

Supplier's Site Datasheet
Igbt Module, 1.2Kv, 25A; Continuous Collector Current Mitsubishi Electric - 10N9746 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.2Kv, 25A; Continuous Collector Current Mitsubishi Electric
10N9746
Igbt Module, 1.2Kv, 25A; Continuous Collector Current Mitsubishi Electric 10N9746
IGBT MODULE, 1.2KV, 25A; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:128W; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 1.2KV, 25A; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:128W; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number PM25CL1A120 10N9746
Product Name Power IPM Transistor Igbt Module, 1.2Kv, 25A; Continuous Collector Current Mitsubishi Electric
Transistor Type Power IPM Transistor
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