Features
SiC Power MOSFET
High Speed Switching
Low RDS(on)
Ultra low loss
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converters
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Inductor heating and welding
Solar inverter
Uninterruptible Power Supplies
Features
SiC Power MOSFET
High Speed Switching
Low RDS(on)
Ultra low loss
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independent switching behavior
Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converters
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
