Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120DAM11CT3AG

Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converters Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Inductor heating and welding Solar inverter Uninterruptible Power Supplies

PM-MOSFET-SIC-SBD~-S P3F