Features
SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converters
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Richardson RFPD
Shenzhen Shengyu Electronics Technology Limited
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Datasheet
Description
Features
SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converters
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Features
SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converters
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Features
SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converters
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting