Semikron, Inc. Power IGBT Transistor SKM150GB12T4

Description
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
  • Power IGBT Transistor - SKM150GB12T4 - Richardson RFPD
    Richardson RFPD
  • Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current Semikron - 94M9316 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Igbt Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3186 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM150GB12T4 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM150GB12T4
Power IGBT Transistor SKM150GB12T4
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz

Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electronic welders at fsw up to 20 kHz

Supplier's Site Datasheet
Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current Semikron - 94M9316 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current Semikron
94M9316
Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current Semikron 94M9316
IGBT, MODULE, 1.2KV, 232A, SEMITRANS 2; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 232A, SEMITRANS 2; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site
Igbt Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3186 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron
55X3186
Igbt Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron 55X3186
IGBT Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes

IGBT Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM150GB12T4 94M9316 55X3186
Product Name Power IGBT Transistor Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current Semikron Igbt Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron
TJ ? to 175 C (? to 347 F)
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