Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70AM10T3AG

Description
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
  • FET, MOSFET Arrays - 150-MSCSM70AM10T3AG-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70AM10T3AG
Silicon Carbide MOSFET Modules MSCSM70AM10T3AG
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive

Features

  • SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss
  • Kelvin source for easy drive
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • High-efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM70AM10T3AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM70AM10T3AG-ND
FET, MOSFET Arrays 150-MSCSM70AM10T3AG-ND
MOSFET 2N-CH 700V 241A

MOSFET 2N-CH 700V 241A

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM70AM10T3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM70AM10T3AG
SIC 2N-CH 700V 241A

SIC 2N-CH 700V 241A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM70AM10T3AG 150-MSCSM70AM10T3AG-ND MSCSM70AM10T3AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F Module
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