Features
SiC Power MOSFET
Low RDS(on)
High speed switching
Ultra low loss
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature independent switching behavior
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-heatsink thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
Features
SiC Power MOSFET
Low RDS(on)
High speed switching
Ultra low loss
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature independent switching behavior
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-heatsink thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
