Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM170HM23CT3AG

Description
Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
  • Silicon Carbide MOSFET Modules - MSCSM170HM23CT3AG - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 150-MSCSM170HM23CT3AG-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - MSCSM170HM23CT3AG - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM170HM23CT3AG - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM170HM23CT3AG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM170HM23CT3AG
Silicon Carbide MOSFET Modules MSCSM170HM23CT3AG
Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High speed switching
    • Ultra low loss
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature independent switching behavior
    • Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • High efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-heatsink thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM170HM23CT3AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM170HM23CT3AG-ND
FET, MOSFET Arrays 150-MSCSM170HM23CT3AG-ND
MOSFET 4N-CH 1700V 124A

MOSFET 4N-CH 1700V 124A

Buy Now Datasheet
FET, MOSFET Arrays - MSCSM170HM23CT3AG - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
MSCSM170HM23CT3AG
FET, MOSFET Arrays MSCSM170HM23CT3AG
PM-MOSFET-SIC-SBD-SP 3F

PM-MOSFET-SIC-SBD-SP3F

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM170HM23CT3AG - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM170HM23CT3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM170HM23CT3AG
SIC 4N-CH 1700V 124A

SIC 4N-CH 1700V 124A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey ODG (Origin Data Global) Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM170HM23CT3AG 150-MSCSM170HM23CT3AG-ND MSCSM170HM23CT3AG MSCSM170HM23CT3AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F Module Module
Polarity N-Channel; 4 N-Channel (Full Bridge)
Transistor Technology / Material Silicon Carbide (SiC)
V(BR)DSS 1700 volts
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