Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70TAM10TPAG

Description
Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal, for easy mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal, for easy mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM70TAM10TPAG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70TAM10TPAG
Silicon Carbide MOSFET Modules MSCSM70TAM10TPAG
Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal, for easy mounting Low profile RoHS compliant Applications Uninterruptible power supplies Switched mode power supplies EV motor and traction drive Welding converters

Features

  • SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss
  • Very Low stray inductance
  • Kelvin source for easy drive
  • Internal thermistor for temperature monitoring
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • High-efficiency converter
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals for power and signal, for easy mounting
  • Low profile
  • RoHS compliant

Applications

  • Uninterruptible power supplies
  • Switched mode power supplies
  • EV motor and traction drive
  • Welding converters
Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM70TAM10TPAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM70TAM10TPAG
SIC 6N-CH 700V 238A

SIC 6N-CH 700V 238A

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM70TAM10TPAG MSCSM70TAM10TPAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6P
Unlock Full Specs
to access all available technical data