Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM170TLM11CAG

Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Kelvin source for easy drive High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Uninterruptible power supplies Solar converter
  • Silicon Carbide MOSFET Modules - MSCSM170TLM11CAG - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM170TLM11CAG - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Kelvin source for easy drive High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Uninterruptible power supplies Solar converter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM170TLM11CAG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM170TLM11CAG
Silicon Carbide MOSFET Modules MSCSM170TLM11CAG
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Kelvin source for easy drive High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Uninterruptible power supplies Solar converter

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Low stray inductance
  • Kelvin source for easy drive
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
  • M5 power connectors

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant

Applications

  • Uninterruptible power supplies
  • Solar converter
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM170TLM11CAG - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM170TLM11CAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM170TLM11CAG
SIC 4N-CH 1700V 238A SP6C

SIC 4N-CH 1700V 238A SP6C

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM170TLM11CAG MSCSM170TLM11CAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C
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