Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HM063CAG

Description
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet
Description
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM120HM063CAG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120HM063CAG
Silicon Carbide MOSFET Modules MSCSM120HM063CAG
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

  • High efficiency converter
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive
Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120HM063CAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120HM063CAG
SIC MOSFET

SIC MOSFET

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120HM063CAG MSCSM120HM063CAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C
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