Semikron, Inc. Power IGBT Transistor SKM100GB173D

Description
IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives on mains 575 - 750 VAC|•DC bus voltage 750 - 1200 VDC|•Public transport (auxiliary syst.)|•Switching (not for linear use)
  • Power IGBT Transistor - SKM100GB173D - Richardson RFPD
    Richardson RFPD
  • Igbt Module, 1.7Kv, 110A, Semitrans 2; Continuous Collector Current Semikron - 88K1216 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives on mains 575 - 750 VAC|•DC bus voltage 750 - 1200 VDC|•Public transport (auxiliary syst.)|•Switching (not for linear use)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM100GB173D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM100GB173D
Power IGBT Transistor SKM100GB173D
IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives on mains 575 - 750 VAC|•DC bus voltage 750 - 1200 VDC|•Public transport (auxiliary syst.)|•Switching (not for linear use)

IGBT Module|•N channel, Homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives on mains 575 - 750 VAC|•DC bus voltage 750 - 1200 VDC|•Public transport (auxiliary syst.)|•Switching (not for linear use)

Supplier's Site Datasheet
Igbt Module, 1.7Kv, 110A, Semitrans 2; Continuous Collector Current Semikron - 88K1216 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.7Kv, 110A, Semitrans 2; Continuous Collector Current Semikron
88K1216
Igbt Module, 1.7Kv, 110A, Semitrans 2; Continuous Collector Current Semikron 88K1216
IGBT MODULE, 1.7KV, 110A, SEMITRANS 2; Continuous Collector Current:110A; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.7kV; Product Range:SEMITRANS 2 SKM Series RoHS Compliant: Yes

IGBT MODULE, 1.7KV, 110A, SEMITRANS 2; Continuous Collector Current:110A; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.7kV; Product Range:SEMITRANS 2 SKM Series RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM100GB173D 88K1216
Product Name Power IGBT Transistor Igbt Module, 1.7Kv, 110A, Semitrans 2; Continuous Collector Current Semikron
TJ ? to 150 C (? to 302 F)
Unlock Full Specs
to access all available technical data