Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120TLM08CAG

Description
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar converter Uninterruptible power supplies
Request a Quote Datasheet
Description
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar converter Uninterruptible power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120TLM08CAG
Silicon Carbide MOSFET Modules MSCSM120TLM08CAG
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar converter Uninterruptible power supplies

The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module.

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant

Applications

  • Solar converter
  • Uninterruptible power supplies
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM120TLM08CAG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120TLM08CAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120TLM08CAG
SIC 4N-CH 1200V 333A SP6C

SIC 4N-CH 1200V 333A SP6C

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MSCSM120TLM08CAG MSCSM120TLM08CAG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C
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