Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120AM50CT1AG

Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-power and high-efficiency converters and inverters Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive