IGBT MODULE, SIX, 1.2KV, 410A; Continuous Collector Current:410A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKIM306GD12E4 | 77R2502 |
| Product Name | Power IGBT Transistor | Igbt Module, Six, 1.2Kv, 410A; Continuous Collector Current Semikron |
| TJ | ? to 125 C (? to 257 F) |
