Semikron, Inc. Power IGBT Transistor SKM150GB123D

Description
IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives|•UPS
  • Power IGBT Transistor - SKM150GB123D - Richardson RFPD
    Richardson RFPD
  • Electrical Parts - SKM150GB123D - 1250398-SKM150GB123D - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives|•UPS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM150GB123D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM150GB123D
Power IGBT Transistor SKM150GB123D
IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives|•UPS

IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•AC inverter drives|•UPS

Supplier's Site Datasheet
Electrical Parts - SKM150GB123D - 1250398-SKM150GB123D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electrical Parts - SKM150GB123D
1250398-SKM150GB123D
Electrical Parts - SKM150GB123D 1250398-SKM150GB123D
Manufacturer: Semikron Win Source Part Number: 1250398-SKM150GB123D Manufacturer Homepage: www.semikron.com Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Semikron
Win Source Part Number: 1250398-SKM150GB123D
Manufacturer Homepage: www.semikron.com
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Richardson RFPD Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM150GB123D 1250398-SKM150GB123D
Product Name Power IGBT Transistor Electrical Parts - SKM150GB123D
Package Type SOT3
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