Semikron, Inc. Power IGBT Transistor SK50GD066ET

Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor power 5.5 kW
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Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor power 5.5 kW
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Suppliers

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Product
Description
Supplier Links
Power IGBT Transistor - SK50GD066ET - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SK50GD066ET
Power IGBT Transistor SK50GD066ET
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inver ter up to 12.5 kVA|•Typ. motor power 5.5 kW

IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•Trench IGBT technology|•CAL technology FWD|•Integrated NTC temperature sensor|Typical Applications:|•Inverter up to 12.5 kVA|•Typ. motor power 5.5 kW

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SK50GD066ET
Product Name Power IGBT Transistor
Package Type SEMITOP 3
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