Semikron, Inc. Power IGBT Transistor SEMIX603GB12VS

Description
Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding
  • Power IGBT Transistor - SEMIX603GB12VS - Richardson RFPD
    Richardson RFPD
  • Igbt, Module, 1.2Kv, 800A; Dc Collector Current Semikron - 86W0620 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SEMIX603GB12VS - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SEMIX603GB12VS
Power IGBT Transistor SEMIX603GB12VS
Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability Typical Applications AC inverter drives UPS Electronic Welding

Features

  • Homogeneous Si
  • VCE(sat) with positive temperature coefficient
  • High short circuit capability

Typical Applications

  • AC inverter drives
  • UPS
  • Electronic Welding
Supplier's Site
Igbt, Module, 1.2Kv, 800A; Dc Collector Current Semikron - 86W0620 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, 1.2Kv, 800A; Dc Collector Current Semikron
86W0620
Igbt, Module, 1.2Kv, 800A; Dc Collector Current Semikron 86W0620
IGBT, MODULE, 1.2KV, 800A; DC Collector Current:800A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; IGBT Termination:-; Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 800A; DC Collector Current:800A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; IGBT Termination:-; Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SEMIX603GB12VS 86W0620
Product Name Power IGBT Transistor Igbt, Module, 1.2Kv, 800A; Dc Collector Current Semikron
Package Type SEMiX 3s TO-3
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