Semikron, Inc. Power IGBT Transistor SKM300GB125D

Description
Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•UPS uninterruptible power supplies at fsw > 20 kHz|•Electronic welders at fsw > 20 kHz
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Description
Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•UPS uninterruptible power supplies at fsw > 20 kHz|•Electronic welders at fsw > 20 kHz
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Suppliers

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Power IGBT Transistor - SKM300GB125D - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM300GB125D
Power IGBT Transistor SKM300GB125D
Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hed mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•UPS uninterruptible power supplies at fsw > 20 kHz|•Electronic welders at fsw > 20 kHz

Ultra Fast IGBT Module|•NPT - Non punch-through IGBT|•Low inductance case|•Short tail current with low temperature dependence|•High short circuit capability, self limiting|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switched mode power supplies at fsw > 20 kHz|•Resonant inverters up to 100 kHz|•Inductive heating|•UPS uninterruptible power supplies at fsw > 20 kHz|•Electronic welders at fsw > 20 kHz

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM300GB125D
Product Name Power IGBT Transistor
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