The QID3320004 is a dual IGBT HVIGBT module rated for 200 amperes and 3300 volts, designed for medium voltage drives, traction, and high voltage power supplies. It features an aluminum nitride ceramic substrate and a copper baseplate, with dimensions of 140.0 mm by 73.0 mm by 38.0 mm. The module operates from -50 to 150 °C and offers an isolation voltage of 6.0 kV AC. It has a thermal resistance of 0.060 °C/W from junction to case per IGBT, meets IEC 60077-1 for creepage and clearance, and is UL recognized (E78240). The creepage distance between terminal and base is 64 mm, and the clearance is 35 mm. The module includes complimentary free-wheel diodes and is 100% dynamically and partially discharge tested. Mounting torque for M5 terminals is 35 in-lb, and the module weighs 800 grams.
Powerex has expanded the HVIGBT module product line with the development of the QID3320004 3300V 200A Dual IGBT low profile module. This module makes use of the latest Mitsubishi R-Series chip technology which offers lower losses, a more rugged SWSOA and RRSOA, and a higher current handling capability as compared to the previous generations of chip technology.
Highly insulated housings offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features
Applications
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | QID3320004 |
| Product Name | Power IGBT Transistor |
| Package Type | 140 x 73 mm |
