MACOM RF Power Transistor PH2226-110M

Description
Radar Power Transistors
  • RF Power Transistor - PH2226-110M - Richardson RFPD
    Richardson RFPD
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Description
Radar Power Transistors
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RF Power Transistor - PH2226-110M - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH2226-110M
RF Power Transistor PH2226-110M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PH2226-110M
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PH2226-110M
TRANSISTOR,BIPOLAR,R ADAR,110W,2.

TRANSISTOR,BIPOLAR,RADAR,110W,2.

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number PH2226-110M PH2226-110M
Product Name RF Power Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Ceramic Flanged
Power Gain 7.4 dB
Output Power 110 watts 583 watts
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