Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor. Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives
IGBT MODULE, QUAD, 1.2KV, 294A; Continuous Collector Current:294A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKIM301TMLI12E4C | 23X8909 |
| Product Name | Power IGBT Transistor | Igbt Module, Quad, 1.2Kv, 294A; Continuous Collector Current Semikron |
| Package Type | Module | TO-3 |
