IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel, homogeneous Silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63532|Typical Applications:|•Switc
| Richardson RFPD | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SK45GAL063 |
| Product Name | Power IGBT Transistor |
| Package Type | SEMITOP 2 |