The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.
The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
RF Mosfet HEMT 48V 300mA 0Hz ~ 2.2GHz 15dB 50W TO-272-2
Win Source Part Number: 1145354-NPT2021
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 20
Voltage - Rated: 160 V
Frequency: 0Hz ~ 2.2GHz
Current - Test: 300 mA
Gain: 15dB
Transistor Type: HEMT
Voltage - Test: 48 V
Power - Output: 50W
Package / Case: TO-272BC
Supplier Device Package: TO-272-2
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 3 (168 Hours)
Current Rating (Amps): 7A
HTSUS: 8541.29.0095
Mfr: MACOM Technology Solutions
Other Names: 1465-1423,NPT2021-00
RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT
RF MOSFET HEMT 48V TO272-2
| Richardson RFPD | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF MOSFET Transistors | Transistors | RF Transistors |
| Product Number | NPT2021 | 1465-1423-ND | 1145354-NPT2021 | NPT2021 | NPT2021 |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF | RF JFET Transistors | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||||
| Package Type | Plastic Flanged | TO-272BC | SOT3 | ||
| Power Gain | 14.2 dB | 15 dB | |||
| Output Power | 50 watts | 50 watts |
