Semitrans 2. Vce(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532.
TRANSISTOR; Continuous Collector Current:231A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV; Product Range:- RoHS Compliant: Yes
IGBT Array & Module Transistor, Dual N Channel, 231 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SKM150GB12V | 77R2551 | 55X3188 |
| Product Name | Power IGBT Transistor | Transistor; Continuous Collector Current Semikron | Igbt Array & Module Transistor, Dual N Channel, 231 A, 1.75 V, 1.2 Kv, Module Rohs Compliant Semikron |
| Transistor Type | Transistor; Continuous Collector Current Semikron |
