Semikron, Inc. Power IGBT Transistor SEMIX453GB12E4P

Description
Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications AC inverter drives UPS Renewable energy systems
  • Power IGBT Transistor - SEMIX453GB12E4P - Richardson RFPD
    Richardson RFPD
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Description
Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications AC inverter drives UPS Renewable energy systems
Request a Quote

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Power IGBT Transistor - SEMIX453GB12E4P - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SEMIX453GB12E4P
Power IGBT Transistor SEMIX453GB12E4P
Trench IGBT Modules Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability Press-fit pins as auxiliary contacts Thermally optimized ceramic Typical Applications AC inverter drives UPS Renewable energy systems

Trench IGBT Modules

Features

  • Homogeneous Si
  • Trench = Trenchgate technology
  • VCE(sat) with positive temperature coefficient
  • High short circuit capability
  • Press-fit pins as auxiliary contacts
  • Thermally optimized ceramic

Typical Applications

  • AC inverter drives
  • UPS
  • Renewable energy systems
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SEMIX453GB12E4P
Product Name Power IGBT Transistor
Package Type SEMiX 3p
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