IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63 532|Typical Applications:|•Switc
IGBT Module; Continuous Collector Current:-; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:1.9kW; Operating Temperature Max:-; IGBT Termination:Press Fit; Collector Emitter Voltage Max:600V; Product Range:- RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SK15GH063 | 83F5616 |
| Product Name | Power IGBT Transistor | Igbt Module; Continuous Collector Current Semikron |
| Package Type | SEMITOP 2 | TO-3 |