Semikron, Inc. Power IGBT Transistor SK15GH063

Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63 532|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS
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Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63 532|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SK15GH063 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SK15GH063
Power IGBT Transistor SK15GH063
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63 532|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS

IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63 532|Typical Applications:|•Switching (not for linear use)|•Inverter|•Switched mode power supplies|•UPS

Supplier's Site Datasheet
Igbt Module; Continuous Collector Current Semikron - 83F5616 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module; Continuous Collector Current Semikron
83F5616
Igbt Module; Continuous Collector Current Semikron 83F5616
IGBT Module; Continuous Collector Current:-; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:1.9kW; Operating Temperature Max:-; IGBT Termination:Press Fit; Collector Emitter Voltage Max:600V; Product Range:- RoHS Compliant: Yes

IGBT Module; Continuous Collector Current:-; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:1.9kW; Operating Temperature Max:-; IGBT Termination:Press Fit; Collector Emitter Voltage Max:600V; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SK15GH063 83F5616
Product Name Power IGBT Transistor Igbt Module; Continuous Collector Current Semikron
Package Type SEMITOP 2 TO-3
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