Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70AM025CT6LIAG

Description
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment. Extremely low stray inductance <2.9 nanohenry Extremely low RDS(on) - down to 2.1 mOhm per switch Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High current capability up to 600 A at very fast switching frequency; and Optional mix of assembly materials to better address different markets and applications.
  • FET, MOSFET Arrays - 150-MSCSM70AM025CT6LIAG-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM70AM025CT6LIAG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment. Extremely low stray inductance <2.9 nanohenry Extremely low RDS(on) - down to 2.1 mOhm per switch Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High current capability up to 600 A at very fast switching frequency; and Optional mix of assembly materials to better address different markets and applications.
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Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70AM025CT6LIAG
Silicon Carbide MOSFET Modules MSCSM70AM025CT6LIAG
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment. Extremely low stray inductance <2.9 nanohenry Extremely low RDS(on) - down to 2.1 mOhm per switch Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High current capability up to 600 A at very fast switching frequency; and Optional mix of assembly materials to better address different markets and applications.

Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.

  • Extremely low stray inductance <2.9 nanohenry
  • Extremely low RDS(on) - down to 2.1 mOhm per switch
  • Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology
  • Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch
  • All die in parallel with their own gate series resistor for homogenous current balancing
  • High current capability up to 600 A at very fast switching frequency; and
  • Optional mix of assembly materials to better address different markets and applications.
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM70AM025CT6LIAG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM70AM025CT6LIAG-ND
FET, MOSFET Arrays 150-MSCSM70AM025CT6LIAG-ND
Mosfet Array 700V 538A (Tc) Chassis Mount SP6C LI

Mosfet Array 700V 538A (Tc) Chassis Mount SP6C LI

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM70AM025CT6LIAG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM70AM025CT6LIAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM70AM025CT6LIAG
SIC 2N-CH 700V 689A SP6C LI

SIC 2N-CH 700V 689A SP6C LI

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM70AM025CT6LIAG 150-MSCSM70AM025CT6LIAG-ND MSCSM70AM025CT6LIAG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6LI Module
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