RF Mosfet HEMT 28V 200mA 0Hz ~ 3GHz 14dB 1.5W 8-SOIC
Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF MOSFET HEMT 28V 8SOIC
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-1416-ND | NPT25015D | NPT25015D |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | |
| Transistor Technology / Material | GaN | ||
| Power Gain | 14 dB |
