IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63532|Typical Applications:|•Switc
TRANSISTOR,IGBT POWER MODULE,FULL BRIDGE,600V V(BR)CES,21A I(C)
| Richardson RFPD | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SK25GH063 | 16J0536 |
| Product Name | Power IGBT Transistor | Transistor,igbt Power Module,full Bridge,600V V(Br)Ces,21A I(C) Semikron |
| Package Type | SEMITOP 2 | TO-3 |