Semikron, Inc. Power IGBT Transistor SK25GH063

Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63532|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS
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Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63532|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SK25GH063 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SK25GH063
Power IGBT Transistor SK25GH063
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63532|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS

IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•High short circuit capability|•Low tail current with low temperature dependence|•UL recognized, file no. E63532|Typical Applications:|•Switching (not for linear use)|•Inverter|•Switched mode power supplies|•UPS

Supplier's Site Datasheet
Transistor,igbt Power Module,full Bridge,600V V(Br)Ces,21A I(C) Semikron - 16J0536 - Newark, An Avnet Company
Chicago, IL, United States
Transistor,igbt Power Module,full Bridge,600V V(Br)Ces,21A I(C) Semikron
16J0536
Transistor,igbt Power Module,full Bridge,600V V(Br)Ces,21A I(C) Semikron 16J0536
TRANSISTOR,IGBT POWER MODULE,FULL BRIDGE,600V V(BR)CES,21A I(C)

TRANSISTOR,IGBT POWER MODULE,FULL BRIDGE,600V V(BR)CES,21A I(C)

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SK25GH063 16J0536
Product Name Power IGBT Transistor Transistor,igbt Power Module,full Bridge,600V V(Br)Ces,21A I(C) Semikron
Package Type SEMITOP 2 TO-3
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