Features
SiC Power MOSFET
Low RDS(on)
High temperature performance
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
Kelvin source for easy drive
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
High power and efficient rectifiers and converters
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals for power and signal, for easy PCB mounting
Low profile
RoHS compliant
Applications
Uninterruptible power supplies
Switched Mode power supplies
Power factor correction
Features
SiC Power MOSFET
Low RDS(on)
High temperature performance
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
Kelvin source for easy drive
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
High power and efficient rectifiers and converters
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals for power and signal, for easy PCB mounting
