Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70AM025CD3AG

Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance M6 power connectors Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance M6 power connectors Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70AM025CD3AG
Silicon Carbide MOSFET Modules MSCSM70AM025CD3AG
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance M6 power connectors Benefits Outstanding performance at high frequency operation High efficiency converter Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin emitter for easy drive
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance
  • M6 power connectors

Benefits

  • Outstanding performance at high frequency operation
  • High efficiency converter
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • EV motor and traction drive
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM70AM025CD3AG-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM70AM025CD3AG-ND
FET, MOSFET Arrays 150-MSCSM70AM025CD3AG-ND
Mosfet Array 700V 538A (Tc) Chassis Mount D3

Mosfet Array 700V 538A (Tc) Chassis Mount D3

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM70AM025CD3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM70AM025CD3AG
SIC 700V 538A D3

SIC 700V 538A D3

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM70AM025CD3AG 150-MSCSM70AM025CD3AG-ND MSCSM70AM025CD3AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type D3 Module
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers