Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin emitter for easy drive
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Plasma and induction heating
Uninterruptible power supplies
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Datasheet
Description
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin emitter for easy drive
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Plasma and induction heating
Uninterruptible power supplies
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin emitter for easy drive
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
Low profile
RoHS compliant
Applications
Plasma and induction heating
Uninterruptible power supplies
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Low stray inductance
Kelvin emitter for easy drive
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals both for power and signal for easy PCB mounting
