Semikron, Inc. Power IGBT Transistor SKM300GAL063D

Description
Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters
  • Power IGBT Transistor - SKM300GAL063D - Richardson RFPD
    Richardson RFPD
Request a Quote Datasheet
Description
Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM300GAL063D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM300GAL063D
Power IGBT Transistor SKM300GAL063D
Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters

Superfast IGBT Module|•NPT- Non punch-through IGBT|•Low tail current with low temperature dependence|•High short circuit capability, self limiting if term. G is clamped to E|•Pos. temp.-coeff. of Vce(sat)|•50 % less turn off losses|•30 % less short circuit current|•Very low Cies, Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould|•Large clearance (13 mm) and creepage distances (20 mm)|Typical Applications:|•Switching (not for linear use)|•Switched mode power supplies|•AC inverter servo drives|•UPS uninterruptible power supplies|•Welding inverters

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM300GAL063D
Product Name Power IGBT Transistor
Unlock Full Specs
to access all available technical data