Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70AM19CT1AG

Features

• SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
• SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
• Low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

• Outstanding performance at high frequency operation
• High efficiency converter
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS compliant

Applications

• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive

Manufacturer: Microchip Technology
Win Source Part Number: 1324628-MSCSM70AM19CT1AG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
FET Type: 2 N Channel (Phase Leg)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Power - Max: 365W (Tc)
Supplier Device Package: SP1F
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: Module
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 150-MSCSM70AM19CT1AG
Base Product Number: MSCSM70
RoHS Status: ROHS3 Compliant