Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM170HRM11NG

Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies
  • Silicon Carbide MOSFET Modules - MSCSM170HRM11NG - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 150-MSCSM170HRM11NG-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM170HRM11NG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM170HRM11NG
Silicon Carbide MOSFET Modules MSCSM170HRM11NG
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • High level of integration
  • Si3N4 substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant

Applications

  • Solar inverter
  • Three level inverter
  • Uninterruptible power supplies
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM170HRM11NG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM170HRM11NG-ND
FET, MOSFET Arrays 150-MSCSM170HRM11NG-ND
MOSFET 4N-CH 1700V/1200V 226A

MOSFET 4N-CH 1700V/1200V 226A

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM170HRM11NG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM170HRM11NG
SIC 4N-CH 1700V/1200V 226A

SIC 4N-CH 1700V/1200V 226A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM170HRM11NG 150-MSCSM170HRM11NG-ND MSCSM170HRM11NG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6C Module
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