Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HM16CTBL3NG

Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for temperature monitoring Extended temperature range Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-heatsink thermal resistance Low profile RoHS compliant Solderable terminals both for power and signal for easy PCB mounting Very integrated power conversion system Applications High reliability power systems High efficiency AC/DC and DC/AC converters Motor control

MOSFET 4N-CH 1200V 150A