MACOM RF Power Transistor NPA1006

Description
The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. The evaluation board for NPA1006 is also available here. The NPA1006 is a close alternative to RFMD RFHA1000. Please contact us for support to transition your design to MACOM.
Request a Quote
Description
The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. The evaluation board for NPA1006 is also available here. The NPA1006 is a close alternative to RFMD RFHA1000. Please contact us for support to transition your design to MACOM.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - NPA1006 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
NPA1006
RF Power Transistor NPA1006
The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure. The evaluation board for NPA1006 is also available here. The NPA1006 is a close alternative to RFMD RFHA1000. Please contact us for support to transition your design to MACOM.

The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

The evaluation board for NPA1006 is also available here.

The NPA1006 is a close alternative to RFMD RFHA1000. Please contact us for support to transition your design to MACOM.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number NPA1006
Product Name RF Power Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFS8407-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
View Details
6 suppliers
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor - T2G6003028-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Power Gain 14 dB
View Details
4 suppliers