Semikron, Inc. Power IGBT Transistor SK50GARL065

Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS
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Description
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS
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Datasheet
Datasheet Summary
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SK50GARL065 is an IGBT module with a freewheeling diode, designed for switching applications such as inverters and switched-mode power supplies. It is housed in a SEMITOP 2 package with a maximum collector-emitter voltage of 650 V, a continuous collector current of 50 A, and a maximum gate-emitter voltage of ±20 V. The module features a direct copper bonded aluminum oxide ceramic (DCB) substrate for heat transfer and isolation, and meets UL 94 V-0 flammability and UL recognized file E63532 standards. It is classified as an electrostatic discharge sensitive device per IEC 60747-1, Chapter IX.

Datasheet Summary
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SK50GARL065 is an IGBT module with a freewheeling diode, designed for switching applications such as inverters and switched-mode power supplies. It is housed in a SEMITOP 2 package with a maximum collector-emitter voltage of 650 V, a continuous collector current of 50 A, and a maximum gate-emitter voltage of ±20 V. The module features a direct copper bonded aluminum oxide ceramic (DCB) substrate for heat transfer and isolation, and meets UL 94 V-0 flammability and UL recognized file E63532 standards. It is classified as an electrostatic discharge sensitive device per IEC 60747-1, Chapter IX.

Suppliers

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Power IGBT Transistor - SK50GARL065 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SK50GARL065
Power IGBT Transistor SK50GARL065
IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical Applications:|•Switc hing (not for linear use)|•Inverter|•Swit ched mode power supplies|•UPS

IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•N-channel homogeneous silicon structure (NPT-Non punch-through IGBT)|•Low tail current with low temperature dependence|•Low threshold voltage|Typical Applications:|•Switching (not for linear use)|•Inverter|•Switched mode power supplies|•UPS

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SK50GARL065
Product Name Power IGBT Transistor
Package Type SEMITOP 2
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