Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HRM311AG

Description
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies
  • FET, MOSFET Arrays - 150-MSCSM120HRM311AG-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120HRM311AG
Silicon Carbide MOSFET Modules MSCSM120HRM311AG
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies

Features

  • SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
  • Very Low stray inductance
  • AIN substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • High-power and high-efficiency rectifiers and converters
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Solar inverter
  • Three level inverter
  • Uninterruptible power supplies
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM120HRM311AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM120HRM311AG-ND
FET, MOSFET Arrays 150-MSCSM120HRM311AG-ND
MOSFET 4N-CH 1200V/700V 89A

MOSFET 4N-CH 1200V/700V 89A

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120HRM311AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120HRM311AG
SIC 4N-CH 1200V/700V 89A/124A

SIC 4N-CH 1200V/700V 89A/124A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM120HRM311AG 150-MSCSM120HRM311AG-ND MSCSM120HRM311AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP1F Module Module
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