Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HRM311AG

Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies

MOSFET 4N-CH 1200V/700V 89A