Semikron, Inc. Power IGBT Transistor SKIM459GD12E4

Description
Trench IGBT Module
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Description
Trench IGBT Module
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKIM459GD12E4 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKIM459GD12E4
Power IGBT Transistor SKIM459GD12E4
Trench IGBT Module

Trench IGBT Module

Supplier's Site
Igbt Module; Continuous Collector Current Semikron - 77R2505 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module; Continuous Collector Current Semikron
77R2505
Igbt Module; Continuous Collector Current Semikron 77R2505
IGBT Module; Continuous Collector Current:554A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:800mV; Product Range:- RoHS Compliant: Yes

IGBT Module; Continuous Collector Current:554A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:800mV; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKIM459GD12E4 77R2505
Product Name Power IGBT Transistor Igbt Module; Continuous Collector Current Semikron
TJ ? to 175 C (? to 347 F)
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