Features
SiC Power MOSFET
Low RDS(on)
High speed switching
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature independent switching behavior
Positive temperature coefficient on VF
Ultra-low weight and profile
Kelvin source for easy drive
Si3N4 substrate with thick copper for improved thermal performance
Internal thermistor for temperature monitoring
Extended temperature range
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-heatsink thermal resistance
Low profile
RoHS compliant
Solderable terminals both for power and signal for easy PCB mounting
Very integrated power conversion system
Applications
High reliability power systems
AC switches
Features
SiC Power MOSFET
Low RDS(on)
High speed switching
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature independent switching behavior
Positive temperature coefficient on VF
Ultra-low weight and profile
Kelvin source for easy drive
Si3N4 substrate with thick copper for improved thermal performance
Internal thermistor for temperature monitoring
Extended temperature range
Benefits
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-heatsink thermal resistance
Low profile
RoHS compliant
Solderable terminals both for power and signal for easy PCB mounting
