Semikron, Inc. Power IGBT Transistor SKM300GB124D

Description
Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•AC inverter drives|•UPS
  • Power IGBT Transistor - SKM300GB124D - Richardson RFPD
    Richardson RFPD
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Description
Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•AC inverter drives|•UPS
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Suppliers

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Power IGBT Transistor - SKM300GB124D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM300GB124D
Power IGBT Transistor SKM300GB124D
Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•AC inverter drives|•UPS

Low Loss IGBT Module|•MOS input (voltage controlled)|•N channel, homogeneous Si structure (NPT-Non Punch-Through IGBT)|•Low inductance case|•Very low tail current with low temperature dependence|•High short circuit capability, self limiting to 6 x Icnom|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DCB Direct Copper Bonding Technology|•Large clearance (12 mm) and creepage distances (20 mm)|Typical Applications:|•Switching (not for linear use)|•AC inverter drives|•UPS

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Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM300GB124D
Product Name Power IGBT Transistor
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