MACOM Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF PH2729-25M

Description
Manufacturer: MACOM Technology Solutions Win Source Part Number: 1325609-PH2729-25M Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Tray Standard Package: 20 Mounting: Chassis Mount Power - Max: 70W Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 4A Gain: 9.2dB Transistor Type: NPN Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0040 Other Part Number: 1465-1198 Base Product Number: PH2729 RoHS Status: ROHS3 Compliant
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Description
Manufacturer: MACOM Technology Solutions Win Source Part Number: 1325609-PH2729-25M Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Tray Standard Package: 20 Mounting: Chassis Mount Power - Max: 70W Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 4A Gain: 9.2dB Transistor Type: NPN Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0040 Other Part Number: 1465-1198 Base Product Number: PH2729 RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1325609-PH2729-25M - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1325609-PH2729-25M
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1325609-PH2729-25M
Manufacturer: MACOM Technology Solutions Win Source Part Number: 1325609-PH2729-25M Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Packaging: Tray Standard Package: 20 Mounting: Chassis Mount Power - Max: 70W Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 4A Gain: 9.2dB Transistor Type: NPN Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0040 Other Part Number: 1465-1198 Base Product Number: PH2729 RoHS Status: ROHS3 Compliant

Manufacturer: MACOM Technology Solutions
Win Source Part Number: 1325609-PH2729-25M
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Tray
Standard Package: 20
Mounting: Chassis Mount
Power - Max: 70W
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 4A
Gain: 9.2dB
Transistor Type: NPN
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0040
Other Part Number: 1465-1198
Base Product Number: PH2729
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Bipolar RF Transistors - 1465-1198-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
1465-1198-ND
Bipolar RF Transistors 1465-1198-ND
RF Transistor NPN 60V 4A 70W Chassis Mount

RF Transistor NPN 60V 4A 70W Chassis Mount

Buy Now Datasheet
Bipolar RF Transistors - PH2729-25M - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
PH2729-25M
Bipolar RF Transistors PH2729-25M
RF TRANS NPN 60V

RF TRANS NPN 60V

Supplier's Site Datasheet
RF Power Transistor - PH2729-25M - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
PH2729-25M
RF Power Transistor PH2729-25M
Radar Power Transistors

Radar Power Transistors

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF Bipolar Transistors
PH2729-25M
RF Bipolar Transistors PH2729-25M
RF Bipolar Transistors

RF Bipolar Transistors

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Richardson RFPD VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 1325609-PH2729-25M 1465-1198-ND PH2729-25M PH2729-25M PH2729-25M
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Bipolar RF Transistors Bipolar RF Transistors RF Power Transistor RF Bipolar Transistors
Polarity NPN NPN NPN; NPN
Package Type SOT3 Ceramic Flanged
Packing Method Tray; Tray
TJ 200 C (392 F) 200 C (392 F)
Power Gain 9.2 dB 9.2 dB 9.2 dB
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