Semikron, Inc. Power IGBT Transistor SKM600GA12T4

Description
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
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Description
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
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Datasheet
Datasheet Summary
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SKM600GA12T4 is a 1200 V, 600 A IGBT4 module in a SEMITRANS™4 package, designed for AC inverter drives, UPS, and electronic welders up to 20 kHz. It features a trench IGBT with positive temperature coefficient for Vₐesat, high short-circuit capability limited to 6 × Iₓnom, and a soft-switching CAL4 diode. The module has a maximum case temperature of 125⁰C, with a thermal resistance from junction to case of 0.049 K/W for the IGBT and 0.086 K/W for the diode. Its isolation voltage is 4000 V AC, and the package has an integrated heat sink mounting with M6 screws requiring 3 to 5 Nm torque. The module weighs 330 g. AEC-Q200, RoHS, UL 94 V-0, IEC 60286-3, and MIL-STD-202 qualifications are not cited.

Datasheet Summary
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SKM600GA12T4 is a 1200 V, 600 A IGBT4 module in a SEMITRANS™4 package, designed for AC inverter drives, UPS, and electronic welders up to 20 kHz. It features a trench IGBT with positive temperature coefficient for Vₐesat, high short-circuit capability limited to 6 × Iₓnom, and a soft-switching CAL4 diode. The module has a maximum case temperature of 125⁰C, with a thermal resistance from junction to case of 0.049 K/W for the IGBT and 0.086 K/W for the diode. Its isolation voltage is 4000 V AC, and the package has an integrated heat sink mounting with M6 screws requiring 3 to 5 Nm torque. The module weighs 330 g. AEC-Q200, RoHS, UL 94 V-0, IEC 60286-3, and MIL-STD-202 qualifications are not cited.

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM600GA12T4 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM600GA12T4
Power IGBT Transistor SKM600GA12T4
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz

Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electronic welders at fsw up to 20 kHz

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM600GA12T4
Product Name Power IGBT Transistor
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