The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module.
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
High efficiency converter
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low profile
RoHS compliant
Very rugged
Applications
Uninterruptible power supplies
The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module.
Features
- SiC Power MOSFET: Low RDS(on), High temperature performance
- SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
- Kelvin emitter for easy drive
- Low stray inductance
- High level of integration
- Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
- High efficiency converter
- Stable temperature behavior
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Low profile
- RoHS compliant
- Very rugged
Applications
- Uninterruptible power supplies
