Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120HRM163AG

Description
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies
  • FET, MOSFET Arrays - 150-MSCSM120HRM163AG-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120HRM163AG
Silicon Carbide MOSFET Modules MSCSM120HRM163AG
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications Solar inverter Three level inverter Uninterruptible power supplies

Features

  • SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss
  • Kelvin source for easy drive
  • Very Low stray inductance
  • AIN substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • High-power and high-efficiency rectifiers and converters
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Solar inverter
  • Three level inverter
  • Uninterruptible power supplies
Supplier's Site Datasheet
FET, MOSFET Arrays - 150-MSCSM120HRM163AG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM120HRM163AG-ND
FET, MOSFET Arrays 150-MSCSM120HRM163AG-ND
MOSFET 4N-CH 1200V/700V 173A

MOSFET 4N-CH 1200V/700V 173A

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM120HRM163AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM120HRM163AG
SIC 4N-CH 1200V/700V 173A

SIC 4N-CH 1200V/700V 173A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MSCSM120HRM163AG 150-MSCSM120HRM163AG-ND MSCSM120HRM163AG
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F Module Module
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