Semikron, Inc. Power IGBT Transistor SEMIX402GB066HDS

Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•UL recognized file no. E63532|Typical Applications:|•Matri x Converter|•Resonant Inverter|•Current Source Inverter
  • Igbt Module, Dual, 600V, 530A; Continuous Collector Current Semikron - 01P3987 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•UL recognized file no. E63532|Typical Applications:|•Matri x Converter|•Resonant Inverter|•Current Source Inverter
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SEMIX402GB066HDS
Power IGBT Transistor SEMIX402GB066HDS
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•UL recognized file no. E63532|Typical Applications:|•Matri x Converter|•Resonant Inverter|•Current Source Inverter

Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•UL recognized file no. E63532|Typical Applications:|•Matrix Converter|•Resonant Inverter|•Current Source Inverter

Supplier's Site
Igbt Module, Dual, 600V, 530A; Continuous Collector Current Semikron - 01P3987 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, Dual, 600V, 530A; Continuous Collector Current Semikron
01P3987
Igbt Module, Dual, 600V, 530A; Continuous Collector Current Semikron 01P3987
IGBT MODULE, DUAL, 600V, 530A; Continuous Collector Current:530A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

IGBT MODULE, DUAL, 600V, 530A; Continuous Collector Current:530A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SEMIX402GB066HDS 01P3987
Product Name Power IGBT Transistor Igbt Module, Dual, 600V, 530A; Continuous Collector Current Semikron
Package Type SEMiX 2s TO-3
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