Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM120XM31CTYZBNMG

Description
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
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Description
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)
Request a Quote
Datasheet
Datasheet Summary
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The MSCSM120XM31CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module integrating Silicon Carbide MOSFETs and Schottky diodes for high-reliability motion control applications. It features an AlSiC base plate, Si₃N₄ substrate, and solderable terminals for direct heatsink mounting. The module has a 1200 V blocking voltage, continuous drain currents up to 80 A per SiC MOSFET, and pulsed collector currents up to 300 A for the soft-start IGBT. Thermal resistance values range from 0.332 °C/W for the soft-start IGBT to 3 °C/W for the solenoid SiC diodes. An internal PTC thermistor provides temperature monitoring. The device is rated for junction temperatures from -55 °C to 175 °C and has a 4000 V RMS isolation voltage. It complies with RoHS standards and weighs 150 g.

Datasheet Summary
Powered by GS/AI

The MSCSM120XM31CTYZBNMG is a three-phase bridge, brake, soft start, and solenoid power module integrating Silicon Carbide MOSFETs and Schottky diodes for high-reliability motion control applications. It features an AlSiC base plate, Si₃N₄ substrate, and solderable terminals for direct heatsink mounting. The module has a 1200 V blocking voltage, continuous drain currents up to 80 A per SiC MOSFET, and pulsed collector currents up to 300 A for the soft-start IGBT. Thermal resistance values range from 0.332 °C/W for the soft-start IGBT to 3 °C/W for the solenoid SiC diodes. An internal PTC thermistor provides temperature monitoring. The device is rated for junction temperatures from -55 °C to 175 °C and has a 4000 V RMS isolation voltage. It complies with RoHS standards and weighs 150 g.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - MSCSM120XM31CTYZBNMG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM120XM31CTYZBNMG
Silicon Carbide MOSFET Modules MSCSM120XM31CTYZBNMG
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage temperature range Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems High reliability Power Core Module (PCM) Modular power module for Power Drive Electronic (PDE)

Features

  • SiC Schottky Diode
  • SiC MOSFET
  • Low stray inductance
  • Lead frames for power connections
  • SI3N4 substrate for improved thermal performance
  • AlSiC base plate for extended reliability and reduced weight
  • Extended storage temperature range
  • Internal thermistor for temperature monitoring

Benefits

  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems
  • High reliability Power Core Module (PCM)
  • Modular power module for Power Drive Electronic (PDE)
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSCSM120XM31CTYZBNMG
Product Name Silicon Carbide MOSFET Modules
Package Type HPD
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