Semikron, Inc. Power MOSFET Transistor SKM111AR

Description
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy busbaring|•Large clearances (10 mm) and creepage distances (20 mm)|•UL recognized, file no. E 63 532|Typical Applications:|•Switc hed mode power supplies|•DC servo and robot drives|•DC choppers|•UPS equipment|•Not suitable for linear amplification
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Description
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy busbaring|•Large clearances (10 mm) and creepage distances (20 mm)|•UL recognized, file no. E 63 532|Typical Applications:|•Switc hed mode power supplies|•DC servo and robot drives|•DC choppers|•UPS equipment|•Not suitable for linear amplification
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Datasheet
Datasheet Summary
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The SKM111AR is a power MOSFET module in a SEMITRANS M1 package, designed for switched-mode power supplies, DC choppers, servo drives, and UPS applications. It features an N-channel enhancement mode transistor with a maximum drain-source voltage of 1200 V, a continuous drain current of 50 A at 25 °C, and an on-resistance of 18 mΩ at 25 °C. The device includes built-in gate resistors to suppress oscillations and an isolated copper baseplate for enhanced thermal performance. All electrical connections are top-mounted, with clearances of 10 mm and creepage distances of 20 mm. It is UL recognized with file number E63532 and compliant with IEC 60747-1 for electrostatic discharge sensitivity.

Datasheet Summary
Powered by GS/AI

The SKM111AR is a power MOSFET module in a SEMITRANS M1 package, designed for switched-mode power supplies, DC choppers, servo drives, and UPS applications. It features an N-channel enhancement mode transistor with a maximum drain-source voltage of 1200 V, a continuous drain current of 50 A at 25 °C, and an on-resistance of 18 mΩ at 25 °C. The device includes built-in gate resistors to suppress oscillations and an isolated copper baseplate for enhanced thermal performance. All electrical connections are top-mounted, with clearances of 10 mm and creepage distances of 20 mm. It is UL recognized with file number E63532 and compliant with IEC 60747-1 for electrostatic discharge sensitivity.

Suppliers

Company
Product
Description
Supplier Links
Power MOSFET Transistor - SKM111AR - Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
SKM111AR
Power MOSFET Transistor SKM111AR
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy busbaring|•Large clearances (10 mm) and creepage distances (20 mm)|•UL recognized, file no. E 63 532|Typical Applications:|•Switc hed mode power supplies|•DC servo and robot drives|•DC choppers|•UPS equipment|•Not suitable for linear amplification

Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Short connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolated copper baseplate|•All electrical connections on top for easy busbaring|•Large clearances (10 mm) and creepage distances (20 mm)|•UL recognized, file no. E 63 532|Typical Applications:|•Switched mode power supplies|•DC servo and robot drives|•DC choppers|•UPS equipment|•Not suitable for linear amplification

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Power MOSFET
Product Number SKM111AR
Product Name Power MOSFET Transistor
rDS(on) 0.0070 ohms
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