Semikron, Inc. Power IGBT Transistor SKM200GAL176D

Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport (auxiliary systems)
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Description
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport (auxiliary systems)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Power IGBT Transistor - SKM200GAL176D - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM200GAL176D
Power IGBT Transistor SKM200GAL176D
Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport (auxiliary systems)

Trench IGBT Module|•Homogeneous Si|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives mains 575 - 750 V AC|•Public transport (auxiliary systems)

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM200GAL176D
Product Name Power IGBT Transistor
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